Datasheet4U Logo Datasheet4U.com

IS61LV12824 - 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY

General Description

The ISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits.

It is fabricated using ISSI's highperformance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption.

Key Features

  • High-speed access time: 8, 10 ns.
  • CMOS low power operation.
  • 756 mW (max. ) operating @ 8 ns.
  • 36 mW (max. ) standby @ 8 ns.
  • TTL compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Available in 119-pin Plastic Ball Grid Array (PBGA) and 100-pin TQFP packages.
  • Industrial temperature available.
  • Lead-free available ISSI JUNE.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM Integrated Circuit Solution
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM ISSI
IS61LV256 32K x 8 Low Voltage CMOS Static RAM Integrated Circuit Solution
IS61LV25616 256 X 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Integrated Circuit Solution
IS61LV25616 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM ISSI

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
IS61LV12816L 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV12816LL 128K x 16 HIGH-SPEED CMOS STATIC RAM
IS61LV2568L 256K x 8 HIGH-SPEED CMOS STATIC RAM
IS61LV256AL 32K x 8 LOW VOLTAGE CMOS STATIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS61LV12824 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES • High-speed access time: 8, 10 ns • CMOS low power operation — 756 mW (max.) operating @ 8 ns — 36 mW (max.) standby @ 8 ns • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Available in 119-pin Plastic Ball Grid Array (PBGA) and 100-pin TQFP packages. • Industrial temperature available • Lead-free available ISSI JUNE 2005 ® DESCRIPTION The ISSI IS61LV12824 is a high-speed, static RAM organized as 131,072 words by 24 bits. It is fabricated using ISSI's highperformance CMOS technology.