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IS61LV51216 - (IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

General Description

RAM organized as 525,288 words by 16 bits.

It is fabricated using ISSI's high-performance CMOS technology.

This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Key Features

  • High-speed access time:.
  • 8, 10, and 12 ns.
  • CMOS low power operation.
  • Low stand-by power:.
  • Less than 5 mA (typ. ) CMOS stand-by.
  • TTL compatible interface levels.
  • Single 3.3V power supply.
  • Fully static operation: no clock or refresh required.
  • Three state outputs.
  • Data control for upper and lower bytes.
  • Industrial and Automotive temperatures available.
  • Lead-free available.

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Datasheet Details

Part number IS61LV51216
Manufacturer ISSI (now Infineon)
File Size 159.08 KB
Description (IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet download datasheet IS61LV51216 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS61LV51216 IS64LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI DECEMBER 2005 ® FEATURES • High-speed access time: — 8, 10, and 12 ns • CMOS low power operation • Low stand-by power: — Less than 5 mA (typ.) CMOS stand-by • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh required • Three state outputs • Data control for upper and lower bytes • Industrial and Automotive temperatures available • Lead-free available DESCRIPTION The ISSI IS61/64LV51216 is a high-speed, 8M-bit static RAM organized as 525,288 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology.