AUIRF3710S Overview
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
AUIRF3710S Key Features
- VDSS = 100V RDS(on) = 18mΩ
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | AUIRF3710S |
|---|---|
| Datasheet | AUIRF3710S AUIRF3710Z Datasheet (PDF) |
| File Size | 359.82 KB |
| Manufacturer | International Rectifier (now Infineon) |
| Description | Power MOSFET |
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Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
See all International Rectifier (now Infineon) datasheets
| Part Number | Description |
|---|---|
| AUIRF3710Z | Power MOSFET |
| AUIRF3710ZS | Power MOSFET |
| AUIRF3004WL | Power MOSFET |
| AUIRF3007 | Power MOSFET |
| AUIRF3205 | Power MOSFET |
| AUIRF3205Z | HEXFET Power MOSFET |
| AUIRF3205ZS | HEXFET Power MOSFET |
| AUIRF3305 | Power MOSFET |
| AUIRF3315S | Power MOSFET |
| AUIRF3415 | Power MOSFET |