Download the AUIRF3710S datasheet PDF.
This datasheet also covers the AUIRF3710Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
O O O O O O O
AUIRF3710Z AUIRF3710ZS
HEXFET® Power MOSFET
D
Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
VDSS = 100V RDS(on) = 18mΩ
G S
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Note: The manufacturer provides a single datasheet file (AUIRF3710Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF3710S (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF3710S. For precise diagrams, and layout, please refer to the original PDF.
PD - 97470 AUTOMOTIVE GRADE Features O O O O O O O AUIRF3710Z AUIRF3710ZS HEXFET® Power MOSFET D Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalan...
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On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * VDSS = 100V RDS(on) = 18mΩ G S www.DataSheet4U.com Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
More Datasheets from International Rectifier (now Infineon)
AUIRF3710S Datasheet
