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PD - 97470
AUTOMOTIVE GRADE
Features
O O O O O O O
AUIRF3710Z AUIRF3710ZS
HEXFET® Power MOSFET
D
Low On-Resistance 175°C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
VDSS = 100V RDS(on) = 18mΩ
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Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
AUIRF3710Z Datasheet
