Download the AUIRF3710ZS datasheet PDF.
This datasheet also covers the AUIRF3710Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.
General Description
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Key Features
O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax
O Lead-Free, RoHS Compliant
O Automotive Qualified.
Note: The manufacturer provides a single datasheet file (AUIRF3710Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.
Full PDF Text Transcription for AUIRF3710ZS (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AUIRF3710ZS. For precise diagrams, and layout, please refer to the original PDF.
AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalan...
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mperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax O Lead-Free, RoHS Compliant O Automotive Qualified * Description www.DataSheetS4pUe.ccoifmically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide v
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AUIRF3710ZS Datasheet
