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AUIRF3710ZS - Power MOSFET

This page provides the datasheet information for the AUIRF3710ZS, a member of the AUIRF3710Z Power MOSFET family.

Description

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax O Lead-Free, RoHS Compliant O Automotive Qualified.

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AUTOMOTIVE GRADE PD - 97470 AUIRF3710Z AUIRF3710ZS Features O Low On-Resistance O 175°C Operating Temperature O Fast Switching O Fully Avalanche Rated O Repetitive Avalanche Allowed up to Tjmax O Lead-Free, RoHS Compliant O Automotive Qualified * Description www.DataSheetS4pUe.ccoifmically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
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