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AUIRF6215S Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G D S D2Pak AUIRF6215S G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Overview

AUTOMOTIVE GRADE AUIRF6215S HEXFET® Power MOSFET.

Key Features

  • l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S VDSS RDS(on) max. ID -150V 0.29  -13A l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D.