Datasheet Summary
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features l l l l l l l l
Advanced Planar Technology Low On-Resistance P-Channel
Dynamic dV/dT Rating
175°C Operating Temperature Fast Switching
Fully Avalanche Rated
VDSS RDS(on) max. ID
-150V 0.29 -13A l l
Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS pliant Automotive Qualified
- D
Description
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for,...
