Datasheet4U Logo Datasheet4U.com

AUIRF6215S - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S VDSS RDS(on) max. ID -150V 0.29  -13A l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D.

📥 Download Datasheet

Datasheet preview – AUIRF6215S

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE AUIRF6215S HEXFET® Power MOSFET Features l l l l l l l l Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S VDSS RDS(on) max. ID -150V 0.29  -13A l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Published: |