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AUIRF6218S - Power MOSFET

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D D.

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AUTOMOTIVE GRADE Features l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.
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