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AUIRF6218S Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

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General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.

G D2Pak AUIRF6218S D S S D G TO-262 AUIRF6218L G Gate D Drain S Source Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.

Overview

AUTOMOTIVE GRADE.

Key Features

  • l l l l l l l l AUIRF6218S AUIRF6218L HEXFET® Power MOSFET Advanced Planar Technology Low On-Resistance P-Channel Dynamic dV/dT Rating D V(BR)DSS RDS(on) max ID -150V 150m -27A 175°C Operating Temperature Fast Switching Fully Avalanche Rated G S l l Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • D D.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Infineon Logo AUIRF6218S Power MOSFET Infineon
Infineon Logo AUIRF6218L Power MOSFET Infineon

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