AUIRFBA1405 Datasheet | International Rectifier

Features l Advanced Planar Technology l Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, Ro HS pliant l Automotive Qualified- AUTOMOTIVE GRADE PD-97768 HEXFET® Power MOSFET D V(BR)DSS 55V RDS(on) typ. 4.3m max 5.0m h G ID (Silicon Limited) 174A S ID (Package Limited) 95A Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. G Gate DS G Super-220 AUIRFBA1405 D Drain S...