Datasheet4U Logo Datasheet4U.com

AUIRFS3306 - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • Dynamic dv/dt Rating.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.

📥 Download Datasheet

Full PDF Text Transcription for AUIRFS3306 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AUIRFS3306. For precise diagrams, and layout, please refer to the original PDF.

AUTOMOTIVE GRADE Features ● Advanced Process Technology ● Ultra Low On-Resistance ● Dynamic dv/dt Rating ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avala...

View more extracted text
ting ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax ● Lead-Free, RoHS Compliant ● Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other ap

More Datasheets from International Rectifier (now Infineon)

Part Number Description
AUIRFS3307Z Power MOSFET
AUIRFS3004 Power MOSFET
AUIRFS3004-7P Power MOSFET
AUIRFS3006 Power MOSFET
AUIRFS3107 Power MOSFET
AUIRFS3107-7P Power MOSFET
AUIRFS3206 Power MOSFET
AUIRFS3207Z Power MOSFET
AUIRFS3607 Power MOSFET
AUIRFS3806 Power MOSFET