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AUIRFS3307Z - Power MOSFET

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l AUIRFS3307Z AUIRFSL3307Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 75V 4.6mΩ 5.8mΩ 128A 120A c.

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Full PDF Text Transcription for AUIRFS3307Z (Reference)

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AUTOMOTIVE GRADE PD - 96404A Features l l l l l l l AUIRFS3307Z AUIRFSL3307Z HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Te...

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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D 75V 4.6mΩ 5.8mΩ 128A 120A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .