Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Features
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AUIRFS3307Z AUIRFSL3307Z
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
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VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
D D
75V 4.6mΩ 5.8mΩ 128A 120A
c.
AUIRFS3307Z Datasheet
