Datasheet4U Logo Datasheet4U.com

AUIRLR2908 - HEXFET Power MOSFET

Datasheet Summary

Description

Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area.

Features

  • l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.
  • G.

📥 Download Datasheet

Datasheet preview – AUIRLR2908
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
AUTOMOTIVE GRADE PD - 97734 AUIRLR2908 Features l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* G Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
Published: |