AUIRLR2908 Datasheet | International Rectifier

AUTOMOTIVE GRADE - 97734 Features l Advanced Planar Technology l Logic-Level Gate Drive l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, Ro HS pliant l Automotive Qualified- Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. HEXFET® Power MOSFET D V(BR)DSS 80V RDS(on) typ. 22.5m max ID (Silicon Limited) k28m 39A S ID (Package Limited) 30A Gate D-Pak AUIRLR2908 Drain Source...