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AUTOMOTIVE GRADE
AUIRLZ24NS AUIRLZ24NL
Features
l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant
l Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
HEXFET® Power MOSFET
D
VDSS
55V
RDS(on) max.
0.
AUIRLZ24NL Datasheet
