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AUIRLZ24NS - Power MOSFET

This page provides the datasheet information for the AUIRLZ24NS, a member of the AUIRLZ24NL Power MOSFET family.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified.

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AUTOMOTIVE GRADE AUIRLZ24NS AUIRLZ24NL Features l Advanced Process Technology l Logic Level Gate Drive l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. G HEXFET® Power MOSFET D VDSS 55V RDS(on) max. 0.
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