IRF1010ESPbF Overview
l IRF1010ESPbF IRF1010ELPbF HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 12mΩ G S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and...
IRF1010ESPbF Key Features
- Surface Mount (IRF1010ES)
- Low-profile through-hole (IRF1010EL)
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
