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IRF3000PBF - HEXFET Power MOSFET

Key Features

  • charging time as Coss while VDS is rising from 0 to 80% VDSS ‚ Starting TJ = 25°C, L = 26mH R G = 25Ω, IAS = 1.9A.
  • Pulse width ≤ 300µs; duty cycle ≤ 2%. † ISD ≤ 0.96A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, T J ≤ 150°C Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD- 95255 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF3000PbF HEXFET® Power MOSFET RDS(on) max 0.40W@VGS = 10V VDSS 300V ID 1.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 www.DataSheet4U.