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IRF3709ZLPBF - (IRF3709xPbF) HEXFET Power MOSFET

Key Features

  • ng+ Pdrive+ Poutput This can be expanded and approximated by; ⎛Q ⎞ + ⎜ oss × Vin × f + (Qrr × Vin × f ) ⎠ ⎝ 2.
  • dissipated primarily in Q1. Ploss = (Irms × Rds(on ) ) 2 ⎛ ⎞ ⎛ Qgs 2 Qgd +⎜I× × Vin × f ⎟ + ⎜ I × × Vin × ig ig ⎝ ⎠ ⎝ + (Qg × Vg × f ) + ⎛ Qoss × Vin × f ⎞ ⎝ 2 ⎠ ⎞ f⎟ ⎠ This simplified loss equation includes the terms Qgs2 and Qoss which are new to Power MOSFET data sheets. Qgs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The i.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

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www.DataSheet4U.com Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free HEXFET® Power MOSFET IRF3709ZPbF IRF3709ZSPbF IRF3709ZLPbF Qg 17nC 6.3m: PD -95465 VDSS RDS(on) max 30V Benefits l Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3709Z D2Pak IRF3709ZS TO-262 IRF3709ZL Absolute Maximum Ratings Parameter VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 30 ± 20 87 62 Units V A c h h 350 79 40 0.53 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.