Datasheet4U Logo Datasheet4U.com

IRF520VPBF - Power MOSFET

Datasheet Summary

Description

TO-220AB Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repe

Features

  • 0) 4-.

📥 Download Datasheet

Datasheet preview – IRF520VPBF

📁 Similar Datasheet

  • IRF520 - N-Channel Power MOSFET (STMicroelectronics)
  • IRF520 - N-Channel Power MOSFET (Supertex Inc)
  • IRF520 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF520 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF520 - Power MOSFET (Vishay)
  • IRF520 - N-Channel MOSFET (INCHANGE)
  • IRF520A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF520FI - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF520FI - N-Channel Power MOSFET (STMicroelectronics)
  • IRF520N - N-Channel MOSFET (INCHANGE)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PD - 94819 IRF520VPbF Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications Lead-Free Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.
Published: |