IRF6628PBF Description
The IRF6628PbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when...
IRF6628PBF Key Features
- Lead-Free (Qualified up to 260°C Reflow)
- Application Specific MOSFETs 25V max ±20V max 1.9mΩ@ 10V 2.5mΩ@ 4.5V
- Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
- Low Conduction Losses 31nC 12nC 4.1nC 26nC 21nC 1.9V
- High Cdv/dt Immunity
- Low Profile (<0.7mm)
- Dual Sided Cooling patible
- patible with existing Surface Mount Techniques