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IRF6629TRPBF - DirectFET Power MOSFET

This page provides the datasheet information for the IRF6629TRPBF, a member of the IRF6629PBF DirectFET Power MOSFET family.

Datasheet Summary

Description

The IRF6629PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.

Features

  • orward Voltage 200 180 160 ID, Drain Current (A) 3.0 Typical VGS(th) Gate threshold Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 11. Maximum Safe Operating Area 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 1.5 ID = 100µA ID = 250µA 1.0 ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 5000 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Thre.

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PD - 97235 www.DataSheet4U.com l l l l l l l l l IRF6629PbF IRF6629TRPbF DirectFET™ Power MOSFET ‚ RoHs Compliant  Typical values (unless otherwise specified) Lead-Free (Qualified up to 260°C Reflow) VDSS VGS RDS(on) RDS(on) Application Specific MOSFETs 25V max ±20V max 1.6mΩ@ 10V 2.1mΩ@ 4.5V Ideal for CPU Core DC-DC Converters Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Low Conduction Losses 34nC 11nC 4.2nC 27nC 23nC 1.8V High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  MX Applicable DirectFET Outline and Substrate Outline (see p.
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