Description
The IRF6716MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile.
Features
- Voltage (V)
1
T A = 25°C
T J = 150°C 0.1 0.01
Single Pulse 0.10 1.00 10.00 100.00
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
40 35 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C)
Fig 11. Maximum Safe Operating Area
3.0
Typical VGS(th) Gate threshold Voltage (V)
2.5
ID, Drain Current (A)
2.0 ID = 100µA ID = 250µA
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1.5
ID = 1.0mA ID = 1.0A
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ).
IRF6716MPBF Datasheet
