IRF6717MPBF Datasheet | International Rectifier

- 97345C IRF6717MPb F IRF6717MTRPb F Direct FET™ Power MOSFET ‚ l Ro Hs pliant and Halgen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling patible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS RDS(on) RDS(on) 25V max ±20V max 0.95m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 46n C 14n C 6.6n C 31n C 35n C 1.8V l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l patible with existing Surface Mount Techniques  l100% Rg tested Applicable Direct FET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MX MP Direct FET™ ISOMETRIC Description The IRF6717MPb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6717MPb F balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies. The IRF6717MPb F has been optimized for parameters that are critical in synchronous buck including Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6717MPb F offers particularly low Rds(on) and high Cdv/dt immunity for synchronous FET applications. Absolute...