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IRF6717MPBF - N-Channel HEXFET Power MOSFET

This page provides the datasheet information for the IRF6717MPBF, a member of the IRF6717MTRPBF N-Channel HEXFET Power MOSFET family.

Datasheet Summary

Description

The IRF6717MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

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Full PDF Text Transcription

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PD - 97345C IRF6717MPbF IRF6717MTRPbF DirectFET™ Power MOSFET ‚ l RoHs Compliant and Halgen Free  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V max ±20V max 0.95m@ 10V 1.6m@ 4.5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 46nC 14nC 6.6nC 31nC 35nC 1.8V l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l100% Rg tested Applicable DirectFET Outline and Substrate Outline (see p.
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