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IRF6722MPBF - Power MOSFET

Datasheet Summary

Description

The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • 10. Typical Source-Drain Diode Forward Voltage 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area Typical VGS(th) Gate threshold Voltage (V) 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 50µA 1.5 ID = 150µA ID = 1.0mA ID = 1.0A ID = 250µA 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 350 Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 0.98A 1.23A BOTTOM.

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PD - 96136 IRF6722MPbF IRF6722MTRPbF RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for Control FET application l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested l l Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.2nC VDSS Qg tot VGS Qgd 4.3nC RDS(on) Qoss 11nC 30V max ±20V max 4.7mΩ@ 10V 8.0mΩ@ 4.5V Qrr 26nC Vgs(th) 1.8V 11nC MP Applicable DirectFET Outline and Substrate Outline (see p.
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