Description
The IRF6722MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- 10. Typical Source-Drain Diode Forward Voltage
60 50
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
Typical VGS(th) Gate threshold Voltage (V)
3.0
2.5
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 50µA
1.5
ID = 150µA ID = 1.0mA ID = 1.0A
ID = 250µA 1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
350
Fig 13. Typical Threshold Voltage vs. Junction Temperature
ID 0.98A 1.23A BOTTOM.
IRF6722MTRPBF Datasheet
