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IRF6726MPBF - Power MOSFET

Description

The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • in-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 200 180 160 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 1200 EAS , Single Pulse Avalanche Energ.

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PD - 96121 IRF6726MPbF IRF6726MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) 1.3mΩ@10V VDSS Qg tot VGS Qgd 16nC RDS(on) 1.9mΩ@ 4.5V 30V max ±20V max 51nC Qgs2 5.4nC Qrr 45nC Qoss 28nC Vgs(th) 1.7V MT MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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