Datasheet4U Logo Datasheet4U.com

IRF6725MPBF - Power MOSFET

Description

The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • .00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA ID = 150µA ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 250µA 1.0 1.5 Fig 12. Maximum Drain Current vs. Case Temperature 800 EAS , Single Pulse Avalanche.

📥 Download Datasheet

📁 Similar Datasheet

  • IRF6775MTRPbF - DIGITAL AUDIO MOSFET (IRF)
  • IRF6785MTRPbF - DIGITAL AUDIO MOSFET (IRF)
  • IRF60B217 - N-Channel MOSFET (INCHANGE)
  • IRF60B217 - IR MOSFET (Infineon)
  • IRF60R217 - N-Channel MOSFET (INCHANGE)
  • IRF60R217 - IR MOSFET (Infineon)
  • IRF610 - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF610 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF610 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF610 - Power MOSFET (Vishay)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 3.9nC VDSS Qg tot VGS Qgd 11nC RDS(on) Qoss 21nC 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V Qrr 39nC Vgs(th) 1.8V 36nC MX MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
Published: |