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IRF6725MPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS pliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling patible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses patible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 3.9nC VDSS Qg tot VGS Qgd 11nC RDS(on) Qoss 21nC 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V Qrr 39nC Vgs(th) 1.8V 36nC MX MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.

General Description

The IRF6725MPbF bines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.

The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Key Features

  • .00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA ID = 150µA ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 250µA 1.0 1.5 Fig 12. Maximum Drain Current vs. Case Temperature 800 EAS , Single Pulse Avalanche.

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IRF6725MPBF Distributor