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IRF6725MTRPBF - Power MOSFET

Download the IRF6725MTRPBF datasheet PDF (IRF6725MPBF included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for power mosfet.

Description

The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • .00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA ID = 150µA ID = 1.0mA ID = 1.0A 0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 250µA 1.0 1.5 Fig 12. Maximum Drain Current vs. Case Temperature 800 EAS , Single Pulse Avalanche.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF6725MPBF_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 3.9nC VDSS Qg tot VGS Qgd 11nC RDS(on) Qoss 21nC 30V max ±20V max 1.7mΩ@ 10V 2.4mΩ@ 4.5V Qrr 39nC Vgs(th) 1.8V 36nC MX MT MP DirectFET ™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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