Description
The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- in-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
200 180 160
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
3.0
2.5
140 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0 ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A
1.5
1.0
0.5 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
1200
EAS , Single Pulse Avalanche Energ.
IRF6726MTRPBF Datasheet
