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IRF6721SPBF - Power MOSFET

Datasheet Summary

Description

The IRF6721SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 250 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold V.

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PD - 96133A IRF6721SPbF IRF6721STRPbF l l l l l l l l l l RoHS Compliant and Halogen Free  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 1.3nC VDSS Qg tot VGS Qgd 3.7nC RDS(on) Qoss 7.9nC 30V max ±20V max 5.1mΩ@ 10V 8.5mΩ@ 4.5V Qrr 19nC Vgs(th) 1.9V 11nC SQ Applicable DirectFET Outline and Substrate Outline (see p.
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