Datasheet Details
| Part number | IRF6721SPBF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 287.47 KB |
| Description | Power MOSFET |
| Datasheet |
 IRF6721SPBF Datasheet
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General Description
The IRF6721SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Key Features
- V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 60 50 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 25µA ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 250 EAS , Single Pulse Avalanche Energy (mJ) Fig 13. Typical Threshold V.