Description
The IRF6721SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical VGS(th) Gate threshold Voltage (V)
60 50
ID, Drain Current (A)
Fig11. Maximum Safe Operating Area
3.0
2.5
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 25µA ID = 100µA ID = 150µA ID = 250µA ID = 1.0mA ID = 1.0A
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C )
Fig 12. Maximum Drain Current vs. Case Temperature
250
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Typical Threshold V.
IRF6721STRPBF Datasheet
