Description
The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
Features
- 1
0.10
1.00
10.00
100.00
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
Typical V GS(th) Gate threshold Voltage (V)
Fig 11. Maximum Safe Operating Area
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A
35 30
ID, Drain Current (A)
25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
50 T J = 25°C
G.
IRF6720S2TRPBF Datasheet
