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IRF6720S2TR1PBF - Power MOSFET

Datasheet Summary

Description

The IRF6720S2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve improved performance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

Features

  • 1 0.10 1.00 10.00 100.00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical V GS(th) Gate threshold Voltage (V) Fig 11. Maximum Safe Operating Area 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Temperature ( °C ) ID = 25µA ID = 250µA ID = 1.0mA ID = 1.0A 35 30 ID, Drain Current (A) 25 20 15 10 5 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 50 T J = 25°C G.

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Full PDF Text Transcription

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PD - 97315 IRF6720S2TRPbF IRF6720S2TR1PbF l l l l l l l l l RoHS Compliant Containing No Lead and Bromide  Low Profile (<0.7 mm) Dual Sided Cooling Compatible  Ultra Low Package Inductance Optimized for High Frequency Switching  Ideal for CPU Core DC-DC Converters Optimized for Control FET Application Compatible with existing Surface Mount Techniques  100% Rg tested Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qgs2 0.9nC VDSS Qg tot VGS Qgd 2.8nC RDS(on) Qoss 5.1nC 30V max ±20V max 6.0mΩ@ 10V 9.8mΩ@ 4.5V Qrr 14nC Vgs(th) 2.0V 7.
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