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IRF6794MTRPbF - Power MOSFET

This page provides the datasheet information for the IRF6794MTRPbF, a member of the IRF6794MPbF Power MOSFET family.

Description

The IRF6794MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • , Drain-to-Source Current (A) 10000 1000 IRF6794MTRPbF.

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Full PDF Text Transcription

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PD - 97457 IRF6794MPbF IRF6794MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.3mΩ@ 10V 2.3mΩ@ 4.5V l Dual Sided Cooling Compatible  l Low Package Inductance l Optimized for High Frequency Switching  Qg tot 31nC Qgd 11nC Qgs2 4.4nC Qrr 51nC Qoss Vgs(th) 27nC 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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