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IRF6797MTRPbF - HEXFET Power MOSFET plus Schottky Diode

This page provides the datasheet information for the IRF6797MTRPbF, a member of the IRF6797MPbF HEXFET Power MOSFET plus Schottky Diode family.

Description

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • ypical Source-Drain Diode Forward Voltage 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1200 1000 800 Typical V GS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100 10 IRF6797MTRPbF.

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Full PDF Text Transcription

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PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode ‚ l RoHs Compliant Containing No Lead and Bromide  l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  Qg tot 45nC Qgd 13nC Qgs2 6.2nC Qrr 38nC Qoss 38nC Vgs(th) 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l 100% Rg tested MX DirectFET™ ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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