Datasheet Details
| Part number | IRF6797MTRPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 235.67 KB |
| Description | HEXFET Power MOSFET plus Schottky Diode |
| Download | IRF6797MTRPbF Download (PDF) |
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Overview: PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching Qg tot 45nC Qgd 13nC Qgs2 6.2nC Qrr 38nC Qoss 38nC Vgs(th) 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested MX DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
Download the IRF6797MTRPbF datasheet PDF. This datasheet also includes the IRF6797MPbF variant, as both parts are published together in a single manufacturer document.
| Part number | IRF6797MTRPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 235.67 KB |
| Description | HEXFET Power MOSFET plus Schottky Diode |
| Download | IRF6797MTRPbF Download (PDF) |
|
|
|
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
| Part Number | Description |
|---|---|
| IRF6797MPbF | HEXFET Power MOSFET plus Schottky Diode |
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