Datasheet Details
| Part number | IRF6797MPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 235.67 KB |
| Description | HEXFET Power MOSFET plus Schottky Diode |
| Download | IRF6797MPbF Download (PDF) |
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| Part number | IRF6797MPbF |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 235.67 KB |
| Description | HEXFET Power MOSFET plus Schottky Diode |
| Download | IRF6797MPbF Download (PDF) |
|
|
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The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques.
Application note AN-1035 is followed regarding the manufacturing methods and processes.
PD - 97320A IRF6797MPbF IRF6797MTRPbF HEXFET® Power MOSFET plus Schottky Diode l RoHs Compliant Containing No Lead and Bromide l Integrated Monolithic Schottky Diode Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max ±20V max 1.1mΩ@ 10V 1.8mΩ@ 4.5V l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching Qg tot 45nC Qgd 13nC Qgs2 6.2nC Qrr 38nC Qoss 38nC Vgs(th) 1.8V l Ideal for CPU Core DC-DC Converters l Optimized for Sync.
FET socket of Sync.
Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested MX DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
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|---|---|
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