IRF6797MPbF - HEXFET Power MOSFET plus Schottky Diode

Product Overview

International Rectifier

Datasheet Details

Part number	IRF6797MPbF
Manufacturer	International Rectifier
File Size	235.67 KB
Description	HEXFET Power MOSFET plus Schottky Diode
Datasheet	IRF6797MPbF Datasheet
Additional preview pages of the IRF6797MPbF datasheet.

Product details

Description

The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

ypical Source-Drain Diode Forward Voltage 220 200 180 160 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC , Case Temperature (°C) Fig 12. Maximum Drain Current vs. Case Temperature 1200 1000 800 Typical V GS(th) Gate threshold Voltage (V) ID, Drain-to-Source Current (A) 1000 100 10 IRF6797MTRPbF.

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Published: Oct 12, 2015 |