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IRF7240 - Power MOSFET

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Description

achieve the extremely low on-resistance per silicon area.

extremely efficient device for use in battery and load G 4 management applications..

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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Lead-Free VDSS -40V PD- 95253 IRF7240PbF HEXFET® Power MOSFET RDS(on) max 0.015@VGS = -10V 0.025@VGS = -4.5V ID -10.5A -8.4A Description S 1 These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to S 2 achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an S 3 extremely efficient device for use in battery and load G 4 management applications.. A 8 D 7 D 6 D 5 D The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
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