IRF7241PbF Overview
S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3 7D 6D per silicon area. This benefit, bined with the ruggedized device design that HEXFET power G 4 5D MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use Top View in battery and load management applications....