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● Trench Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free
VDSS
-40V
PD - 95294
IRF7241PbF
HEXFET® Power MOSFET
RDS(on) max (mW)
41@VGS = -10V
70@VGS = -4.5V
ID
-6.2A
-5.0A
Description
S1
8
A D
New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3
7D 6D
per silicon area. This benefit, combined with the ruggedized device design that HEXFET power
G
4
5D
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use
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in battery and load management applications.
IRF7241PbF Datasheet
