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IRF7241PbF - Power MOSFET

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per silicon area.

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● Trench Technology ● Ultra Low On-Resistance ● P-Channel MOSFET ● Available in Tape & Reel ● Lead-Free VDSS -40V PD - 95294 IRF7241PbF HEXFET® Power MOSFET RDS(on) max (mW) 41@VGS = -10V 70@VGS = -4.5V ID -6.2A -5.0A Description S1 8 A D New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3 7D 6D per silicon area. This benefit, combined with the ruggedized device design that HEXFET power G 4 5D MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use Top View in battery and load management applications.
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