IRF7241PbF
Description
S1
New trench HEXFET® Power MOSFETs from S 2 International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance S 3
7D 6D per silicon area. This benefit, bined with the ruggedized device design that HEXFET power
5D
MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use
Top View in battery and load management applications.
SO-8
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current
Power Dissipation
- Power Dissipation
- Linear Derating Factor
VGS TJ, TSTG
Gate-to-Source Voltage Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL RθJA
.irf.
Parameter Junction-to-Drain Lead Junction-to-Ambient
- Max. -40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150
Units V
W m W/°C
V °C
Typ.
- -
-...
