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IRF7240PBF - HEXFET Power MOSFET

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Description

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications..

Features

  • ) 252-7105 TAC Fax: (310) 252-7903 Visit us at www. irf. com for sales contact information.06/05 www. irf. com 9.

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PD- 95253 IRF7240PbF HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free VDSS -40V RDS(on) max 0.015@VGS = -10V 0.025@VGS = -4.5V ID -10.5A -8.4A Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
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