IRF7241
Description
New trench HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management applications.
8 7
A D D D D
T o p V ie w
SO-8
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation
- Power Dissipation
- Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-40 -6.2 -4.9 -25 2.5 1.6 20 ± 20 -55 to + 150
Units
W m W/°C V °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient
- Typ.
- -
- -
- -...
