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IRF7342QPBF - Power MOSFET

General Description

Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive.

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Other Datasheets by International Rectifier (now Infineon)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD - 96109 IRF7342QPbF O O O O O O O O Advanced Process Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Automotive [Q101] Qualified Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -55V RDS(on) = 0.105Ω 6 5 Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.