Datasheet Details
| Part number | IRF7342 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 136.94 KB |
| Description | Power MOSFET |
| Datasheet | IRF7342_InternationalRectifier.pdf |
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Overview: PD -91859 IRF7342 HEXFET® Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast.
| Part number | IRF7342 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 136.94 KB |
| Description | Power MOSFET |
| Datasheet | IRF7342_InternationalRectifier.pdf |
|
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l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -55V RDS(on) = 0.105Ω 3 6 4 5 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRF7342 | Power MOSFET | Infineon |
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IRF7342PbF | Power MOSFET | Infineon |
| UMW | IRF7342TR | Dual P-Channel MOSFET | UMW |
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IRF7342TRPBF | Dual P-Channel MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| IRF7342D2 | MOSFET & Schottky Diode |
| IRF7342D2PBF | MOSFET & Schottky Diode |
| IRF7342PBF | Power MOSFET |
| IRF7342QPBF | Power MOSFET |
| IRF7342TRPBF-1 | Power MOSFET |
| IRF7341 | HEXFET Power MOSFET |
| IRF7341GPBF | Power MOSFET |
| IRF7341PBF | HEXFET Power MOSFET |
| IRF7341Q | HEXFET Power MOSFET |
| IRF7341QPbF | Power MOSFET |