opper board Coss eff. is a fixed capacitance that gives the same charging time ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 16mH
Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7478 (Reference)
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IRF7478. For precise diagrams, and layout, please refer to the original PDF.
PD- 94055A SMPS MOSFET Applications High frequency DC-DC converters IRF7478 HEXFET® Power MOSFET RDS(on) max (mΩ) 26@VGS = 10V 30@VGS = 4.5V l VDSS 60V ID 4.2A 3.5A Benef...
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(on) max (mΩ) 26@VGS = 10V 30@VGS = 4.5V l VDSS 60V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.
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IRF7478 Datasheet
