IRF7478 - Power MOSFET

Features

opper board Coss eff. is a fixed capacitance that gives the same charging time ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25°C, L = 16mH Data and specifications subject to change without notice. This product has been designed and qualified for the industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD.

International Rectifier

Datasheet Details

Part number	IRF7478
Manufacturer	International Rectifier
File Size	209.14 KB
Description	Power MOSFET
Datasheet	IRF7478 Datasheet
Additional preview pages of the IRF7478 datasheet.

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Full PDF Text Transcription

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PD- 94055A SMPS MOSFET Applications High frequency DC-DC converters IRF7478 HEXFET® Power MOSFET RDS(on) max (mΩ) 26@VGS = 10V 30@VGS = 4.5V l VDSS 60V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App.

Published: Apr 16, 2005 |