IRF7478PBF Datasheet | International Rectifier

PD- 95280 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF7478Pb F HEXFET® Power MOSFET VDSS 60V RDS(on) max (m W) 26@VGS = 10V 30@VGS = 4.5V 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current A A D D D D Top View SO-8 .. Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation- Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt † Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 7.0 5.6 56 2.5 0.02 ± 20 3.7 -55 to + 150 300 (1.6mm from case ) Units A W W/°C V V/ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient - Typ. - - - - - -...