When mounted on 1 inch square copper board Coss eff. is a fixed capacitance that gives the same charging time ISD ≤ 4.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 16mH
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR’s Web site. IR WORLD.
Full PDF Text Transcription for IRF7478PBF (Reference)
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IRF7478PBF. For precise diagrams, and layout, please refer to the original PDF.
PD- 95280 SMPS MOSFET Applications High frequency DC-DC converters l Lead-Free l IRF7478PbF HEXFET® Power MOSFET VDSS 60V RDS(on) max (mW) 26@VGS = 10V 30@VGS = 4.5V ID 4...
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Power MOSFET VDSS 60V RDS(on) max (mW) 26@VGS = 10V 30@VGS = 4.5V ID 4.2A 3.5A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 www.DataSheet4U.
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IRF7478PBF Datasheet
