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IRF7494 - HEXFET Power MOSFET

Features

  • TJ = 25°C, L = 77mH RG = 25Ω, IAS = 3.1A.
  • When mounted on 1 inch square copper board, t ≤ 10 sec.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . † ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found o.

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Full PDF Text Transcription

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FOR REVIEW ONLY PD -94641 PD TBD IRF7494 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 150V 44m:@VGS = 10V RDS(on) max ID 5.2A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 150 ± 20 5.2 3.7 42 3.0 0.02 3.
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