When mounted on 1 inch square copper board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS . ISD ≤ 3.1A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found o.
Full PDF Text Transcription for IRF7494 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IRF7494. For precise diagrams, and layout, please refer to the original PDF.
FOR REVIEW ONLY PD -94641 PD TBD IRF7494 HEXFET® Power MOSFET l Applications High frequency DC-DC converters VDSS 150V 44m:@VGS = 10V RDS(on) max ID 5.2A Benefits l Low G...
View more extracted text
nverters VDSS 150V 44m:@VGS = 10V RDS(on) max ID 5.2A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 100°C IDM PD @TA = 25°C dv/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Max. 150 ± 20 5.2 3.7 42 3.0 0.02 3.
More Datasheets from International Rectifier (now Infineon)
IRF7494 Datasheet
