When mounted on 1 inch square copper board, t ≤ 10 sec.
Pulse width ≤ 400µs; duty cycle ≤ 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS. ISD ≤ 3.1A, di/dt ≤ 1907A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. Rθ is measured at TJ of approximately 90°C. Note: For the most current drawing please refer to IR website at http://www. irf. com/package/
Data and spe.
Full PDF Text Transcription for IRF7494PbF (Reference)
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IRF7494PbF. For precise diagrams, and layout, please refer to the original PDF.
Applications l High frequency DC-DC converters l Lead-Free PD - 95349C IRF7494PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max ID 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to...
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Power MOSFET RDS(on) max ID 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App.
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IRF7494PbF Datasheet
