Datasheet4U Logo Datasheet4U.com

IRF7494PbF - Power MOSFET

Features

  • ure. ‚ Starting TJ = 25°C, L = 55mH, RG = 25Ω, IAS = 3.1A.
  • When mounted on 1 inch square copper board, t ≤ 10 sec.
  • Pulse width ≤ 400µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. † ISD ≤ 3.1A, di/dt ≤ 1907A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C. ‡ Rθ is measured at TJ of approximately 90°C. Note: For the most current drawing please refer to IR website at http://www. irf. com/package/ Data and spe.

📥 Download Datasheet

Datasheet preview – IRF7494PbF

📁 Similar Datasheet

  • IRF740 - N-channel MOSFET (STMicroelectronics)
  • IRF740 - Power MOSFET (Vishay)
  • IRF740 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF7401 - Thermoelectric Cooler Controller (Analog Devices)
  • IRF7404 - Thermoelectric Cooler Controller (Analog Devices)
  • IRF740A - Power MOSFET (Vishay)
  • IRF740A - N-Channel MOSFET (INCHANGE)
  • IRF740AL - Power MOSFET (Vishay)
  • IRF740AS - Power MOSFET (Vishay)
  • IRF740B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
Applications l High frequency DC-DC converters l Lead-Free PD - 95349C IRF7494PbF VDSS 150V HEXFET® Power MOSFET RDS(on) max ID 44mΩ@VGS = 10V 5.1A Benefits l Low Gate to Drain Charge to Reduce Switching Losses S l Fully Characterized Capacitance Including S Effective COSS to Simplify Design, (See App.
Published: |