IRF7779L2PBF Datasheet | International Rectifier

l Ro HS pliant, Halogen Free  l Lead-Free (Qualified up to 260°C Reflow) l Ideal for High Performance Isolated Converter Primary Switch Socket l Optimized for Synchronous Rectification l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.7mm) l Dual Sided Cooling patible  l patible with existing Surface Mount Techniques  l Industrial Qualified IRF7779L2Pb F Direct FET™ Power MOSFET ‚ Typical values (unless otherwise specified) VDSS RDS(on) 150V min ±20V max 9.0mΩ@ 10V Qg tot Qgd Vgs(th) 97n C 33n C 4.0V S S D GS S S S SD S Applicable Direct FET Outline and Substrate Outline  SB SC M2 M4 L8 Direct FET™ ISOMETRIC L4 L6 L8 Description The IRF7779L2TR/TR1Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FETTM packaging to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The Direct FET package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET package allows dual sided cooling to maximize thermal transfer in power systems. The IRF7779L2TR/TR1Pb F is optimized for high frequency switching and synchronous rectification applications. The reduced total losses in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high performance power converters. Orderable part number Package Type Standard Pack Form Quantity Note IRF7779L2TRPb...