d by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to Idmax at which time the drain voltage begins to change. Minimizing Qgs2 is a critical factor in reducing switching losses in Q1.
Qoss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Qoss is formed by the parallel combination of the voltage dependant (nonlinear) capacitances Cds and Cdg when multipli.
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Applications l Synchronous MOSFET for Notebook
Processor Power l Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in Networking Systems l Lead-Free l Halogen-Free
Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage
and Current l 100% Tested for RG
PD - 96251
IRF8113GPbF
VDSS 30V
HEXFET® Power MOSFET
RDS(on) max
Qg Typ.
:5.
IRF8113GPbF Datasheet
