IRF8113GPbF Datasheet | International Rectifier

Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems l Lead-Free l Halogen-Free Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG - 96251 IRF8113GPb F VDSS 30V HEXFET® Power MOSFET RDS(on) max Qg Typ. :5.6m @VGS = 10V 24n C S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V c Continuous Drain Current, VGS @ 10V Pulsed Drain Current f Power Dissipation f Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter g RθJL Junction-to-Drain Lead f RθJA Junction-to-Ambient Max. 30 ± 20 17.2 13.8 135 2.5 1.6 0.02 -55 to + 150 Typ. - - - - - - Max. 20 50 Units V W W/°C °C Units °C/W Notes  through … are on page 10...