IRF8113PbF Datasheet | International Rectifier

Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 100% Tested for RG l Lead-Free - 95138B IRF8113Pb F HEXFET® Power MOSFET VDSS RDS(on) max Qg Typ. :30V 5.6m @VGS = 10V 24n C S1 S2 S3 G4 AA 8D 7D 6D 5D Top View SO-8 Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V c Pulsed Drain Current f Power Dissipation f Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance Parameter g RθJL Junction-to-Drain Lead fg RθJA Junction-to-Ambient Notes  through … are on page 10 .irf. Max. 30 ± 20 17.2 13.8 135 2.5 1.6 0.02 -55 to + 150 Units V W/°C °C Typ. - - - - - - Max. 20 50 Units °C/W 6/29/06 IRF8113Pb F Static @ TJ = 25°C (unless otherwise...