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IRF9910 - Power MOSFET

Features

  • J 1 1 V = 0V GS V = 0V GS 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage Fig 16. Typical Source-Drain Diode Forward Voltage , Drain-to -Source On Resistance (m Ω) DS(on) R DS(on), Drain-to -Source On Resistance (m Ω) 40 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 TJ = 25°C T = 125°C J I = 10A D 25 ID = 12A 20 15 T = 125°C J 10 T = 25°C J 5 R 0.

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PD - 95869 IRF9910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.3m:@VGS = 10V RDS(on) max ID 10A 12A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating   6   *   6   *  '   '   '   '  SO-8 Absolute Maximum Ratings Parameter VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 10 8.3 83 2.0 1.3 0.016 -55 to + 150 W/°C °C Q1 Max. 20 ± 20 Q2 Max. Units V 12 9.
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