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IRF9910 - Power MOSFET

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Overview

PD - 95869 IRF9910 HEXFET® Power MOSFET Applications l Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box VDSS 20V Q1 13.4m:@VGS = 10V Q2 9.

Key Features

  • J 1 1 V = 0V GS V = 0V GS 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 15. Typical Source-Drain Diode Forward Voltage Fig 16. Typical Source-Drain Diode Forward Voltage , Drain-to -Source On Resistance (m Ω) DS(on) R DS(on), Drain-to -Source On Resistance (m Ω) 40 35 30 25 20 15 10 5 0 2 3 4 5 6 7 8 9 10 TJ = 25°C T = 125°C J I = 10A D 25 ID = 12A 20 15 T = 125°C J 10 T = 25°C J 5 R 0.

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