IRF9910PBF Description
Units V 12 9.9 98 W A c Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Parameter RθJL RθJA Junction-to-Drain Lead Junction-to-Ambient Typ. 42 62.5 Units °C/W fg Notes through are on page 10 .irf. 1 07/23/08 Free Datasheet http://../ IRF9910PbF Static @ T J = 25°C (unless otherwise specified) Parameter BV DSS ∆Β V DSS /∆TJ Drain-to-Source Breakdown...
IRF9910PBF Key Features
- Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, game consoles and set-top box
- Very Low RDS(on) at 4.5V VGS
- Low Gate Charge
- Fully Characterized Avalanche Voltage and Current
- 20V VGS Max. Gate Rating 6 * 6 * ' ' ' ' SO-8