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IRF9956PBF - HEXFET Power MOSFET

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SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA =

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PD - 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 2 VDSS = 30V RDS(on) = 0.10Ω 3 6 4 5 Top View Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
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