IRF9956PBF Datasheet | International Rectifier

- 95259 IRF9956PbF l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S1 G1 S2 G2 1 8 7 D1 D1 D2 D2 VDSS = 30V RDS(on) = 0.10Ω Top View Remended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an...